Publications
Publications since 2008
Peer-reviewed articles
- Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo
Liang and Naoteru Shigekawa, "Comparison of thermal stabilities of p+-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes," Jpn. J. Appl. Phys. 61, SF1009 (2022). DOI: 10.35848/1347-4065/ac6480
- Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi Maezawa
and Naoteru Shigekawa, "Low-loss characteristics of coplanar waveguides fabricated by directly
bonding metal foils to high-resistivity Si substrates," Jpn. J. Appl. Phys. 61, SF1008 (2022). DOI: 10.35848/1347-4065/ac629a
- Ryota Fukuzawa, Jianbo Liang, Naoteru Shigekawa and Takuji Takahashi, "Quantitative capacitance measurements in frequency modulation electrostatic force microscopy," Jpn. J. Appl. Phys. 61, SL1005 (2022). DOI: 10.35848/1347-4065/ac5fb9
- Yuki Idutsu, Keigo Awai, Jianbo Liang, Hisaaki Nishimura, DaeGwi Kim, Yong-Gu
Shim and Naoteru Shigekawa, "Intrinsic luminescence-downshifting effects of Zn-based Mn-doped nanoparticle
layers on Si solar cells," Jpn. J. Appl. Phys. 61, 062004 (2022). DOI: 10.35848/1347-4065/ac5fc8
- Y. Ohno, J. Liang, H. Yoshida, Y. Shimizu, Y. Nagai and N. Shigekawa, "Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding," Jpn. J. Appl. Phys. 61, SF1006 (2022). DOI: 10.35848/1347-4065/ac5d11
- Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani,
Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang and Naoteru Shigekawa,
"AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by
bonding-first process," Appl. Phys. Express 15, 041003 (2022). DOI: 10.35848/1882-0786/ac5ba7
- Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa and Masataka Higashiwaki, "Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties,"
J. Appl. Phys., 131, 074501 (2022) (9 pages). DOI: 10.1063/5.0080734
- Jianbo Liang, Daiki Takatsuki, Masataka Higashiwaki, Yasuo Shimizu, Yutaka
Ohno, Yasuyoshi Nagai and Naoteru Shigekawa, "Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for
high-power device applications," Jpn. J. Appl. Phys., 61, SF1001 (2022) (7 pages). DOI: 10.35848/1347-4065/ac4c6c
- Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo
Liang and Naoteru Shigekawa, "Fabrication of p+-Si/p-diamond heterojunction diodes and effects of thermal annealing on
their electrical properties," Diamond and Related Materials, 120, 108665 (2021) (6 pages). DOI: 10.1016/j.diamond.2021.108665
- Jianbo Liang, Ayaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, Seong-Woo Kim,Koji Koyama, Makoto Kasu, Yasuyoshi Nagai and Naoteru Shigekawa, "Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding
State for Highly Efficient Device Design," Adv. Mater. 2104564 (2021) (13 pages). DOI: 10.1002/adma.202104564
- Hisaaki Nishimura, Takaya Maekawa, Kazushi Enomoto, Naoteru Shigekawa,
Tomomi Takagi, Susumu Sobue, Shoichi Kawai and DaeGwi Kim, "Water-soluble ZnSe/ZnS:Mn/ZnS quantum dots convert UV to visible light
for improved Si solar cell efficiency," J. Mater. Chem. C, 9, pp. 693-701 (2021). DOI: 10.1039/D0TC04580B
- Jianbo Liang, Yuji Nakamura, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai,
Hongxing Wang and Naoteru Shigekawa, "Room temperature direct bonding of diamond and InGaP in atmospheric air," Functional Diamond, 1 (1) pp. 110-116 (2021). DOI: 10.1080/26941112.2020.1869435
- Y. Idutsu, J.Liang, H.Nishimura, D.G.Kim and N.Shigekawa, "Modulation of Characteristics of Si Solar Cells by Luminescence-Downshifting
Zn-Based Nanoparticles with Mn doped," Proc. 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC),
2020, pp. 234-237. DOI: 10.1109/PVSC45281.2020.9300637 [Reviewed Conference
Proceedings]
- Jianbo Liang, Yuji Nakamura, Tianzhuo Zhan, Yutaka Ohno, Yasuo Shimizu,
Kazu Katayama, Takanobu Watanabe, Hideto Yoshida, Yasuyoshi Nagai, Hongxing
Wang, Makoto Kasu and Naoteru Shigekawa, "Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications," Diamond and Related Materials,111, 108207 (2021) (7 pages). DOI: 10.1016/j.diamond.2020.108207
- T. Hara, J. Liang, K. Araki, T. Kamioka, H. Sodabanlu, K. Wanatabe, M. Sugiyama and N. Shigekawa, "Nanostructural Investigation on GaAs//Indium Tin Oxide/Si Junctions for
III-V-on-Si Hybrid Multijunction Cells," ECS Trans. 98 (4) pp. 125-133 (2020). DOI: 10.1149/09804.0125ecst [Reviewed Electrochemical Soc. Conference Proceedings]
- T. Hishida, J. Liang, and N. Shigekawa, "III-V Thin Film Solar Cells Bonded to Si Substrates via Metal Grids," ECS Trans. 98 (4) pp. 117-123 (2020). DOI: 10.1149/09804.0117ecst [Reviewed Electrochemical Soc. Conference Proceedings]
- Naoteru Shigekawa and Jianbo Liang, "Low Temperature Direct Bonding Technologies of Semiconductor Substrates
(Invited)," The IEICE Transaction on Electronics (Japanese Edition) J103-C, 7, pp. 341-348 (2020).
- Y. Ohno, J. Liang, N. Shigekawa, H. Yoshida, S. Takeda, R. Miyagawa, Y.
Shimizu and Y. Nagai, "Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces," Appl. Surf. Sci., 525, 146610 (2020) (5 pages). DOI: 10.1016/j.apsusc.2020.146610
- Naoteru Shigekawa, Ryo Kozono, Sanji Yoon, Tomoya Hara, Jianbo Liang and
Akira Yasui, "Effects of post bonding annealing on GaAs//Si bonding interfaces and its
application for sacrificial-layer-etching based multijunction solar cells," Sol. Energy Mater. Sol. Cells, 210, 110501 (2020) (7 pages+Supplementary Material). DOI: 10.1016/j.solmat.2020.110501
- Jianbo Liang, Yutaka Ohno, Yuichiro Yamashita, Yasuo Shimizu, Shinji Kanda, Naoto Kamiuchi, Seongwoo Kim, Koyama Koji, Yasuyoshi Nagai, Makoto Kasu and Naoteru Shigekawa, "Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated
Bonding: Implications for Thermal Management," ACS Appl. Nano Mater. 3 (3) pp. 2455-2462 (2020). DOI: 10.1021/acsanm.9b02558
- Y. Idutsu, S. Tanaka, J.Liang, T.Narazaki, H.Nishimura, D.G.Kim, and N.Shigekawa,
"Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells," Proc. 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC),
Chicago, IL, USA, 2019, pp. 1753-1755. DOI: 10.1109/PVSC40753.2019.8981279
[Reviewed Conference Proceedings]
- Ryo Kozono, Sanji Yoon, Jianbo Liang and Naoteru Shigekawa, "GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of
Directly-Bonded III-V/Si Junctions," Proc. 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC),
Chicago, IL, USA, 2019, pp. 1018-1020. DOI: 10.1109/PVSC40753.2019.8980757
[Reviewed Conference Proceedings]
- Shinji Kanda, Yasuo Shimizu, Yutaka Ohno, Kenji Shirasaki, Yasuyoshi Nagai,
Makoto Kasu, Naoteru Shigekawa, and Jianbo Liang, "Fabrication of diamond/Cu direct bonding for power device applications", Jpn. J. Appl. Phys. 59, SB, SBBB03 (2020) (5 pages). DOI: 10.7567/1347-4065/ab4f19
- Takashi Hishida, Jianbo Liang, and Naoteru Shigekawa, "Low-resistance semiconductor/semiconductor junctions with intermediate metal grids for III-V-on-Si multijunction solar cells", Jpn. J. Appl. Phys. 59, SB, SBBB04 (2020) (5 pages). DOI: 10.7567/1347-4065/ab4c8a
- Yutaka Ohno, Hideto Yoshida, Naoto Kamiuchi, Ryotaro Aso, Seiji Takeda,
Yasuo Shimizu, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa, "Impact of focused ion beam on structural and compositional analysis of
interfaces fabricated by surface activated bonding", Jpn. J. Appl. Phys. 59, SB, SBBB05 (2020) (5 pages). DOI: 10.7567/1347-4065/ab4b15
- Keita Matsuura, Jianbo Liang, Koichi Maezawa, and Naoteru Shigekawa, "Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated
Bonding Technologies", IEEE Trans. Electron Devices, 66, pp. 3946-3952, 2019. DOI: 10.1109/TED.2019.2928620
- Hisaaki Nishimura, Yuxin Lin, Masayuki Hizume, Taichi Taniguchi, Naoteru
Shigekawa, Tomomi Takagi, Susumu Sobue, Shoichi Kawai, Eiichi Okuno, and
DaeGwi Kim, "Synthesis of Mn-Doped ZnSe-ZnS Alloy Quantum Dots by a Hydrothermal Method", Chem. Lett. 48, 9, pp. 1081-1083 (2019). DOI: 10.1246/cl.190365
- Hisaaki Nishimura, Yuxin Lin, Masayuki Hizume, Taichi Taniguchi, Naoteru
Shigekawa, Tomomi Takagi, Susumu Sobue, Shoichi Kawai, Eiichi Okuno, and
DaeGwi Kim, "Hydrothermal synthesis of ZnSe:Mn quantum dots and their optical properties", AIP Advances 9, 0225223 (2019) (7 pages). DOI: 10.1063/1.5085814
- Jianbo Liang, Yan Zhou, Satoshi Masuya, Filip Gucmann, Manikant Singh,
James Pomeroy, Seongwoo Kim, Martin Kuball, Makoto Kasu, Naoteru Shigekawa,
"Annealing effect of surface-activated bonded diamond/Si interface", Diamond and Related Materials, 93, pp. 187-192, 2019. DOI: 10.1016/j.diamond.2019.02.015
- Shoji Yamajo, Sanji Yoon, Jianbo Liang, Hassanet Sodabanlu, Kentaro Watanabe,
Masakazu Sugiyama, Akira Yasui, Eiji Ikenaga, Naoteru Shigekawa, "Hard X-ray photoelectron spectroscopy investigation of annealing effects
on buried oxide in GaAs/Si junctions by surface-activated bonding", Appl. Surf. Sci., 473, pp. 627-632 (2019). DOI: 10.1016/j.apsusc.2018.12.199
- Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu,
and Naoteru Shigekawa, "Stability of diamond/Si bonding interface during device fabrication process", Appl. Phys. Express 12, 016501 (2019) (5 pages). DOI: 10.7567/1882-0786/aaeedd
- S. Morita, J. Liang, and N. Shigekawa, "Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding", ECS Trans. 86 (5) pp. 137-142 (2018). DOI: 10.1149/08605.0137ecst [Reviewed Electrochemical Soc. Conference Proceedings]
- Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa, "Room-temperature direct bonding of diamond and Al", Scripta Mater. 159, pp. 58-61 (2019). DOI: 10.1016/j.scriptamat.2018.09.016
- Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka,
and Naoteru Shigekawa, "Electrical properties of GaAs//indium tin oxide/Si junctions for III-V-on-Si
hybrid multijunction cells", Jpn. J. Appl. Phys. 57, 08RD05 (2018) (6 pages). DOI: 10.7567/JJAP.57.08RD05
- Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takefumi Kamioka,
Kenji Araki, and Masafumi Yamaguchi, "GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction
Cells With Low Series Resistance", IEEE J. Photovolt. 8 (3), pp. 879-886 (2018). DOI: 10.1109/JPHOTOV.2018.2802203
- Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima, and Manabu Arai, "Transport characteristics of minority electrons across surface-activated-bonding based p-Si/n-4H-SiC heterointerfaces", Jpn. J. Appl. Phys. 57, 02BE04 (2018) (5 pages). DOI: 10.7567/JJAP.57.02BE04
- Jianbo Liang, Tomoki Ogawa, Tomoya Hara, Kenji Araki, Takefumi Kamioka,
and Naoteru Shigekawa, "Electrical conduction of Si/indium tin oxide/Si junctions fabricated by
surface activated bonding", Jpn. J. Appl. Phys. 57, 02BE03 (2018) (5 pages). DOI: 10.7567/JJAP.57.02BE03
- Shoji Yamajo, Jianbo Liang and Naoteru Shigekawa, "Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions", Jpn. J. Appl. Phys. 57, 02BE02 (2018) (5 pages). DOI: 10.7567/JJAP.57.02BE02
- Sho Morita, Jianbo Liang, Moeko Matsubara, Marwan Dhamrin, Yoshitaka Nishio and Naoteru Shigekawa, "Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding", Jpn. J. Appl. Phys. 57, 02BE01 (2018) (5 pages). DOI: 10.7567/JJAP.57.02BE01
- Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang and Naoteru Shigekawa,
"Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated
bonding at room temperature", Jpn. J. Appl. Phys. 57, 02BA01 (2018) (3 pages). DOI: 10.7567/JJAP.57.02BA01
- Naoteru Shigekawa and Jianbo Liang, "Measurements of Potentials at Tap Contacts and Estimation of Resistance
across Bonding Interfaces in InGaP/GaAs/Si Hybrid Triple-Junction Cells", Proc. 2017 IEEE 44th Photovoltaic Specialists Conference, pp. 2551-2553,
Washington D.C., USA, June 25-30 (2017).
- Naoteru Shigekawa, Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Takafumi Kamioka, Kenji Araki and Masafumi Yamaguchi, "InGaP/GaAs/ITO/Si Hybrid Triple-Junction Cells with GaAs/ITO Bonding Interfaces", Proc. 2017 IEEE 44th Photovoltaic Specialists Conference, pp. 2548-2550,
Washington D.C., USA, June 25-30 (2017).
- Naoteru Shigekawa, "Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and
Energy-Saving Devices", J. Vac. Soc. Jpn. 60 (11), pp. 421-427 (2017). [Invited, Japanese] DOI: 10.3131.jvsj2.60.421
- Jianbo Liang, Katsuya Furuna, Moeko Matsubara, Marwan Dhamrin, Yoshitaka
Nishio, and Naoteru Shigekawa, "Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts
in Devices", ECS J. Solid State Sci. Technol., 6 (9) pp. P626-P632 (2017). DOI:
10.1149/2.0251709jss
- Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa, "Realization of direct bonding of single crystal diamond and Si substrates", Appl. Phys. Lett. 110, 111603 (2017) (4 pages). DOI: 10.1063/1.4978666
- J. Liang, S. Shimizu, M. Arai, and N. Shigekawa, "Determination of Band Structure at GaAs/4H-SiC Heterojunctions", ECS Trans. 75 (9) pp. 221-227 (2016). DOI: 10.1149/07509.0221ecst [Reviewed Electrochemical Soc. Conference Proceedings]
- J. Liang, K. Furuna, M. Matsubara, M. Dhamrin, Y. Nishio, and N. Shigekawa, "Ultra-thick metal ohmic contact fabrication using surface activated bonding", ECS Trans. 75 (9) pp. 25-32 (2016). DOI: 10.1149/07509.0025ecst [Reviewed Electrochemical Soc. Conference Proceedings]
- J. Liang, S. Nishida, M. Arai, and N. Shigekawa, "Improved electrical properties of n-n and p-n Si/SiC junctions with thermal
annealing treatment," J. Appl. Phys. 120, 034504 (2016).
- M. Mitsuhara, N. Watanabe, H. Yokoyama, R. Iga, and N. Shigekawa, "Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP
multiple-quantum-well structures grown by metalorganic molecular beam epitaxy
on GaAs (100) sbstrate," J. Crystal Growth 449, 86 (2016).
- Li Chai, Jianbo Liang, and Naoteru Shigekawa, "Effects of annealing on the electrical characteristics of GaAs/GaAs junctions
by surface-activated bonding," Jpn. J. Appl. Phys. 55, 068002 (2016).
- Akio Yamamoto, Kazuaki Kodama, Naoteru Shigekawa, Takashi Matsuoka, and
Masaaki Kuzuhara, "Low-temperature (³ 400 ºC) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst," Jpn. J. Appl. Phys. 55, 05FD04 (2016).
- Masato Shingo, Jianbo Liang, Naoteru Shigekawa, Manabu Arai, and Kenji
Shiojima, "Mapping of Si/SiC p–n heterojunctions using scanning internal photoemission
microscopy," Jpn. J. Appl. Phys. 55, 04ER15 (2016).
- Naoteru Shigekawa and Jianbo Liang, "Impacts of optical properties of anti-reflection coatings on characteristics of InGaP/GaAs/Si hybrid triple-junction cells," Proc. 2015 IEEE 42nd Photovoltaic Specialists Conference, DOI:10.1109/PVSC.2015.7356076 (2015).
- Jianbo Liang, Sae Shimizu, Shota Nishida, Naoteru Shigekawa, and Manabu Arai, "4H-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding," ECS Solid State Lett. 4, Q55 (2015).
- Akio Yamamoto, Kazuki. Kodama, Md. Tanvir Hasan, Naoteru Shigekawa, and
Masaaki Kuzuhara, "MOVPE growth of thick (~1 µm) InGaN on AlN/Si substrates for InGaN/Si
tandem solar cells," Jpn. J. Appl. Phys. 54, 08KA12 (2015).
- Naoteru Shigekawa, Jianbo Liang, Ryusuke Onitsuka, Takaaki Agui, Hiroyuki
Juso, and Tatsuya Takamoto,"Current-voltage and spectral-response characteristics of surface-activated-bonding-based
InGaP/GaAs/Si hybrid triple-junction cells," Jpn. J. Appl. Phys. 54, 08KE03 (2015).
- A. Yamamoto, Tanvir Md. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara,
"Growth temperature dependent critical thickness for phase separation in
thick(~1 µm) InxGa1-xN (x=0.2-0.4)", J. Crystal Growth, 419, 64 (2015).
- A. Yamamoto, T. Md. Hasan, K. Kodama, N. Shigekawa, and M. Kuzuhara, "Thick (~1 µm) p-type InxGa1-xN (x~0.36) grown by MOVPE at a low temperature (~570 ºC)," Physica Stat. Solidi B, 252, 5, pp. 909-912 (2015) DOI: 10.1002/pssb.201451736.
- Jianbo Liang, Li Chai, Shota Nishida, Masashi Morimoto and Naoteru Shigekawa,
"Investigation on the interface resistance of Si/GaAs heterojunctions fabricated by surface-activated bonding," Jpn. J. Appl. Phys. 54. 030211 (2015).
- Masashi Morimoto, Jianbo Liang, Shota Nishida and Naoteru Shigekawa, "Effects of annealing on electrical properties of Si/Si junctions by surface-activated
bonding," Jpn. J. Appl. Phys. 54, 030212 (2015).
- Shota Nishida, Jianbo Liang, Tomohiro Hayashi, Manabu Arai and Naoteru
Shigekawa, "Correlation between the electrical properties of p-Si/n-4H-SiC junctions
and cocentrations of acceptors in Si," Jpn. J. Appl. Phys. 54, 030210 (2015).
- N. Watanabe, M. Mitsuhara, H. Yokoyama, J. Liang, and N. Shigekawa, "Influence of InGaN/GaN multiple quantum well structure on photovoltaic
characteristics of solar cell," Jpn. J. Appl. Phys. 53, 112301 (2014).
- J. Liang, S. Nishida, T. Hayashi, M. Arai, and N. Shigekawa, "Effects of interface state charges on the electrical properties of Si/SiC heterojunctions," Appl. Phys. Lett. 105, 151607 (2014).
- Naoteru Shigekawa, Li Chai, Masashi Morimoto, Jianbo Liang, Ryusuke Onitsuka,
Takaaki Agui, Hiroyuki Juso, and Tatsuya Takamoto,"Hybrid Triple-Junction Solar Cells by Surface Activated Bonding of III-V
Double-Junction-Cell Heterostructures to Ion-Implantation-Based Si Cells," Proc. 40th IEEE Photovoltaic Specialists Conference pp. 534-537 (2014).
- Naoteru Shigekawa, Jianbo Liang, Masashi Morimoto, and Shota Nishida, "Type-II Band Profile of GaAs/Si Hetero Junctions by Surface Activated Bonding
for Hybrid Tandem Cells," ECS Trans. 64 (5) 235 (2014).
- J. Liang, S. Nishida, M. Arai, and N. Shigekawa, "Effects of thermal annealing process on the electrical properties of p+-Si/n-SiC
heterojunctions," Appl. Phys. Lett. 104, 161604 (2014).
- N. Shigekawa, J. Liang, N. Watanabe, and A. Yamamoto, "Fabrication of nitride/Si tandem cell structures with low environmental burden by surface activated bonding," Physica Status Solidi C 11, 644 (2014).
- S. Nishida, J. Liang, M. Morimoto, N. Shigekawa, and M. Arai, "I-V characteristics in surface-activated bonding (SAB) based Si/SiC junctions
in raised ambient temperatures", Materials Science Forum 778---780 718 (2014).
- N. Shigekawa, M. Morimoto, S. Nishida, and J. Liang, "Surface-activated-bonding-based InGaP-on-Si double-junction cells", Jpn. J. Appl. Phys. 53, 04ER05 (2014).
- A. Yamamoto, M. T. Hasan, A. Mihara, N. Shigekawa, and M. Kuzuhara, "Phase separation of thick (~1 µm) InxGa1-xN (x~0.3) grown on AlN/Si (111): Simulateneous emergence of metallic In-Ga
and GaN-rich InGaN", Appl. Phys. Express 7, 035502 (2014).
- N. Shigekawa, J. Liang, and N. Watanabe, "Demonstration of Nitride-on-Phosphide Hybrid Tandem Solar Cells by Using
Surface Activated Bonding," Proc. 39th IEEE Photovoltaic Specialists Conference pp. 2470-2473
(2013).
- J. Liang, T. Miyazaki, M. Morimoto, S. Nishida, and N. Shigekawa, "Electrical properties of Si/Si interfaces by using surface-activated bonding", J. Appl. Phys. 114, 183703 (2013).
- J. Liang, M. Morimoto, S. Nishida, and N. Shigekawa, "Band structures of Si/InGaP heterojunctions by using surface-activated
bonding", Phys. Status Solidi C 10, 1644 (2013).
- A. Yamamoto, A. Mihara, N. Shigekawa, and N. Narita, "Marked suppression of In incorporation in heavily Si-doped InxGa1-xN (x~0.3) grown on GaN/a-Al2O3(0001) template", Appl. Phys. Lett. 103, 082113 (2013).
- J. Liang, S. Nishida, M. Morimoto, and N. Shigekawa, "Surface-activating-bonding-based low-resistance Si/III-V junctions", Elec. Lett. 49 (13) pp. 830-832 (2013).
- A. Yamamoto, A. Mihara, Y. Zheng, and N. Shigekawa, "A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate
In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate", Jpn. J. Appl. Phys. 52, 08JB19 (2013).
- N. Watanabe, H. Yokoyama, and N. Shigekawa, "Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible
Tunneling Junction Using Polarization", Jpn. J. Appl. Phys. 52, 08JN03 (2013).
- A. Yamamoto, A. Mihara, D. Hironaga, K. Sugita, A. G. Bhuiyan, A. Hashimoto,
N. Shigekawa, and N. Watanabe, "MOVPE Growth of InxGa1-xN (x~0.5) on Si(111) substrates with a pn junction on the surface", Phys. Status Solidi C10 (3) pp. 437-440 (2013).
- Jianbo Liang, Tatsuya Miyazaki, Masashi Morimoto, Shota Nishida, Noriyuki
Watanabe, and Naoteru Shigekawa, "Electrical Properties of p-Si/n-GaAs Heterojunctions by Using Surface Activated Bonding", Appl. Phys. Express 6, 021801 (2013).
- Noriyuki Watanabe, Haruki Yokoyama, Naoteru Shigekawa, Ken-ichi Sugita,
and Akio Yamamoto, "Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN
Multiple Quantum Well Solar Cells", Jpn. J. Appl. Phys. 51 (10) pp. 10ND10-1-10ND10-5 (2012).
- Haruki Yokoyama, Takuya Hoshi, Naoteru Shigekawa, and Minoru Ida, "Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at
Low Temperature by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, 51 (2), pp. 025601-1-025601-4 (2012).
- Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Tadao Ishibashi, and Satoshi Kodama, "Inverted InAlAs/InGaAs Avalanche Photodiode with Low-High-Low Electric
Field Profile", Japanese Journal of Applied Physics, 51 (2), pp. 02BG03-1-02BG03-4 (2012).
- M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata and N. Shigekawa,
"Optimization of AlGaN-based spacer layer for InAlN/GaN interfaces", Physica Status Solidi (c) 9 (3-4), pp. 592-595 (2012).
- Ashraful G. Bhuiyan, A. Mihara, T. Esaki, K. Sugita, A. Hashimoto, A. Yamamoto,
N. Watanabe, H. Yokoyama and N. Shigekawa, "MOVPE growth of InGaN on Si(111) substrates with an intermediate range
of In content", Physica Status Solidi (c) 9 (3-4), pp. 670-672 (2012).
- M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa, "Measurement of valence-band offsets of InAlN/GaN heterostructures grown
by metal-organic vapor phase epitaxy", Journal of Applied Physics, 109 (1) pp. 013703-1-013703-8 (2011).
- M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa,"Al0.44Ga0.56N spacer layer to prevent electron accumulation inside barriers
in lattice-matched InAlN/AlGaN/AlN/GaN heterostructures", Applied Physics Letters, 98 (14), pp. 142117-1-142117-3 (2011).
- M. Akazawa, B. Gao, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa,
"Investigation of polarization-induced electric field in ultrathin InAlN
layers on GaN by X-ray photoelectron spectroscopy", Physica Status Solidi (c) 8 (7-8), pp. 2139-2141 (2011).
- M. Akazawa, T. Matsuyama, T. Hashizume, M. Hiroki, S. Yamahata, and N. Shigekawa, "Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by
metal-organic vapor phase epitaxy", Applied Physics Letters, 96 (13), pp. 132104-1 132104-3 (2010).
- Masanobu Hiroki, Narihiko Maeda, and Naoteru Shigekawa, "Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN (x = 0.245~0.325) Heterostructure
Field Effect Transistors with Regrown AlGaN Contact Layers", Japanese Journal of Applied Physics 49 (4), pp. 04DF13-1-04DF13-6 (2010).
- Masanobu HIROKI,Narihiko MAEDA, and Naoteru SHIGEKAWA,
"Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures
FETs on the AlN Interlayer Thickness", IEICE Transaction on Electronics, E93-C (5), pp. 579-584 (2010).
- Naoteru Shigekawa and Suehiro Sugitani, "Analysis
of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN
HEMTs", IEICE Transaction on Electronics, E93-C (8), pp. 1212-1217 (2010).
- T. Yoshimatsu, Y. Muramoto, S. Kodama, T. Furuta, N. Shigekawa, H. Yokoyama, and T. Ishibashi, " Suppression of space charge effect in MIC-PD using composite field structure",IEE Electronics Letters, 46 (13), pp. 941-943 (2010).
- Naoteru Shigekawa and Suehiro Sugitani, "Numerical analysis of impact of stress in passivation films on
electrical properties in Al GaN/GaN heterostructures", IEICE Electronics Express, 6 (14), pp. 1045-1050 (2009).
- Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, and Kohji Hohkawa, "Surface
Acoustic Waves in Reverse-Biased AlGaN/GaN
Heterostructures", IEEE Transaction on Electron Devices, 55 (7), pp. 1585-1591 (2008).
- Kohji Hohkawa, Keishin Koh, Kazumi Nishimura, and Naoteru Shigekawa, "DC Variable Harmonic Pass Band Operation of AlGaN/GaN Surface Acoustic
Wave Devices", Japanese Journal of Applied Physics, 47 (9), pp. 7104-7107 (2008).
Articles without review
- Jianbo Liang, Yutaka Ohno, and Naoteru Shigekawa, "Direct Bonding
of Diamond and Dissimilar Materials at Room Temperature," Materia
Japan, 6, 334 (2022). [Japanese] DOI: 10.2320/materia.61.334
- Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo
Liang and Naoteru Shigekawa, "High temperature stability of
p+-Si/p-diamond heterojunction diodes," in Abstracts of 2021 7th
International Workshop on Low Temperature Bonding for 3D Integration
(LTB-3D), Online, Oct. 5-11, 2021. DOI: 10.1109/LTB-3D53950.2021.9598364
- Jianbo Liang, Daiki Takatsuki, Yasuo Shimizu, Masataka Higashiwaki, Yutaka
Ohno, Yasuyoshi Nagai and Naoteru Shigekawa, "Fabrication of Ga2O3/Si
direct bonding interface for high power device applications," in Abstracts
of 2021 7th International Workshop on Low Temperature Bonding for 3D Integration
(LTB-3D), Online, Oct. 5-11, 2021. DOI: 10.1109/LTB-3D53950.2021.9598435
- Hiromu Nagai, Keisuke Kawamura, Yoshiki Sakaida, Hiroki Uratani, Yasuo
Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa and Jianbo
Liang, "Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface
heat dissipation," in Abstracts of 2021 7th International Workshop on
Low Temperature Bonding for 3D Integration (LTB-3D), Online, Oct. 5-11,
2021. DOI: 10.1109/LTB-3D53950.2021.9598380
- Yutaka Ohno, Jianbo Liang, Hideto Yoshida, Yasuo Shimizu, Yasuyoshi
Nagai and Naoteru Shigekawa, "Structural analysis of diamond/silicon
heterointerfaces fabricated by surface activated bonding at room
temperature," in Abstracts of 2021 7th International Workshop on Low
Temperature Bonding for 3D Integration (LTB-3D), Online, Oct. 5-11,
2021. DOI: 10.1109/LTB-3D53950.2021.9598382
- Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki
Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Naoteru Shigekawa
and Jianbo Liang, "Fabrication of GaN/SiC/diamond structure for
efficient thermal management of power device," in Abstracts of 2021 7th
International Workshop on Low Temperature Bonding for 3D Integration
(LTB-3D), Online, Oct. 5-11, 2021. DOI: 10.1109/LTB-3D53950.2021.9598453
- Kenya Yonekura, Tasuku Kawamoto, Jianbo Liang, Eiji Shikoh, Koichi
Maezawa and Naoteru Shigekawa, "Coplanar waveguides fabricated by
directly bonding metal foils to high-resistivity Si substrates," in
Abstracts of 2021 7th International Workshop on Low Temperature Bonding
for 3D Integration (LTB-3D), Online, Oct. 5-11, 2021. DOI:
10.1109/LTB-3D53950.2021.9598401
- Kazuki Sawai, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai
and Naoteru Shigekawa, "Polarization inverted GaN/GaN junctions
fabricated by surface-activated bonding," in Abstracts of 2021 7th
International Workshop on Low Temperature Bonding for 3D Integration
(LTB-3D), Online, Oct. 5-11, 2021. DOI: 10.1109/LTB-3D53950.2021.9598452
- Zexin Wan, Jianbo Liang, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai and
Naoteru Shigekawa, "Nanostructural Analysis of Al/β-Ga2O3 Interface
Fabricated Using Surface Activated Bonding," in Abstracts of 2021 7th
International Workshop on Low Temperature Bonding for 3D Integration
(LTB-3D), Online, Oct. 5-11, 2021. DOI: 10.1109/LTB-3D53950.2021.9598385
- Jianbo Liang and Naoteru Shigekawa, "Realization of high-efficiency devices by direct bonding of diamond and dissimilar materials," Monthly Magazine of Japan Energy & Technology Intelligence,
68, 6 (2020) [Japanese].
- Ryo Kozono, Jianbo Liang, Kentaroh Watanabe, Masakazu Sugiyama and Naoteru
Shigekawa, "GaAs//Si Hybrid Double Junction Cells Fabricated by Direct
Bonding of Epitaxially Lifted-Off GaAs Subcell Layers on PET Films",
The 29th International Conference on Photovoltaic Science and Engineering
(PVSEC-29), Xi'an, China, Nov. 4-8, 2019.
- Y. Nakamura, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa,
and J. Liang, "Fabrication of GaAs/diamond direct bonding for high
power device applications", 13th Topical Workshop on Heterostructure
Microelectronics (TWHM 2019), Toyama, Japan, Aug. 26-29, 2019, 11-7.
- J. Liang, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, S. Kim, M. Kasu,
M. Kuball, and N. Shigekawa, "Interfacial characterization of GaN/diamond
heterostructures prepared by room temperature bonding for high power device
applications", 13th Topical Workshop on Heterostructure Microelectronics
(TWHM 2019), Toyama, Japan, Aug. 26-29, 2019, 11-6.
- Shoji Yamajo, Jianbo Liang and Naoteru Shigekawa, "Electrical Properties
of GaAs/GaN Junctions by Bonding GaN Layers Grown on Free Standing Substrates",
13th International Conference on Nitride Semiconductors 2019 (ICNS-13),
Bellevue, Washington, USA, July 7-12, 2019, BP02.10.
- Jianbo Liang, Makoto Kasu, Martin Kuball and Naoteru Shigekawa, "Direct
Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature",
13th International Conference on Nitride Semiconductors 2019 (ICNS-13),
Bellevue, Washington, USA, July 7-12, 2019, BP01.12.
- S. Horikawa, S. Morita, J. Liang, Y. Kaneko, Y. Nishio, M. Matsubara, H.
Asahi, and N. Shigekawa, "Bonding strength evaluation of Al foil/AlN
junctions by surface activated bonding", in Abstracts of 2019 6th International Workshop on Low Temperature Bonding
for 3D Integration (LTB-3D 2019), Kanazawa, Japan, May 21-25, 2019. DOI:
10.23919/LTB-3D.2019.8735417
- M. Sakihara, J. Liang, and N. Shigekawa, "Directly bonded n+-InGaP/n+-Si junctions with a low interface resistance", in Abstracts of 2019
6th International Workshop on Low Temperature Bonding for 3D Integration
(LTB-3D 2019), Kanazawa, Japan, May 21-25, 2019. DOI: 10.23919/LTB-3D.2019.8735389
- J. Liang, Y. Zhou, S. Masuya ; F. Gucmann, M. Singh, J. Pomeroy, S. Kim,
M. Kuball, M. Kasu, N. Shigekawa, "Effect of annealing temperature
on diamond/Si interfacial structure", in Abstracts of 2019 6th International
Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019), Kanazawa,
Japan, May 21-25, 2019. DOI: 10.23919/LTB-3D.2019.8735382
- Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa,
Y. Nagai, J. Liang, and N. Shigekawa, "Artifacts in the structural
analysis of SAB-fabricated interfaces by using focused ion beam",
in Abstracts of 2019 6th International Workshop on Low Temperature Bonding
for 3D Integration (LTB-3D 2019), Kanazawa, Japan, May 21-25, 2019. DOI:
10.23919/LTB-3D.2019.8735379
- Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, and N. Shigekawa,
"Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces
fabricated by surface activated bonding at room temperature", in Abstracts
of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration
(LTB-3D 2019), Kanazawa, Japan, May 21-25, 2019. DOI: 10.23919/LTB-3D.2019.8735300
- Z. Wan, J. Liang, and N. Shigekawa, "Analysis of SiC/Si Bonding Interface
with Thermal Annealing Treatment by XPS", in Abstracts of 2019 6th
International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D
2019), Kanazawa, Japan, May 21-25, 2019. DOI: 10.23919/LTB-3D.2019.8735299
- T. Hishida, J. Liang, and N. Shigekawa, "Electrical properties of
p+-GaAs//patterned metal layer/n+-Si junctions", in Abstracts of 2019 6th International Workshop on
Low Temperature Bonding for 3D Integration (LTB-3D 2019), Kanazawa, Japan,
May 21-25, 2019. DOI: 10.23919/LTB-3D.2019.8735232
- H. Akazawa, J. Liang, M. Matsubara, H.
Asahi, Y. Nishio, and N. Shigekawa, "A polyimide film/aluminum foil junction by
modified surface activated bonding", in Abstracts of 2019 6th International Workshop on Low Temperature Bonding
for 3D Integration (LTB-3D 2019), Kanazawa, Japan, May 21-25, 2019. DOI:
10.23919/LTB-3D.2019.8735220
- Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, and
Y. Nagai, "Atom probe tomography of GaAs homointerfaces fabricated
by surface-activated bonding", in Abstracts of 2019 6th International
Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019), Kanazawa,
Japan, May 21-25, 2019. DOI: 10.23919/LTB-3D.2019.8735167
- S. Kanda, S. Masuya, M. Kasu, N. Shigekawa, and J. Liang, "Fabrication
of Diamond/Cu Direct Bonding for Power Device Application", in Abstracts
of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration
(LTB-3D 2019), Kanazawa, Japan, May 21-25, 2019. DOI: 10.23919/LTB-3D.2019.8735136
- J. Liang, "Direct bonding of diamond and Cu at room temperature for power device application", 13th New Diamond and Nano Carbons Conference (NDNC 2019), Hualien, Taiwan, May 12-17, 2019, P1-13.
- Yasuo Shimizu, Naoki Ebisawa, Yutaka Ohno, Jianbo Liang, Naoteru Shigekawa,
Koji Inoue, Yasuyoshi Nagai, "Impurity Distribution at Si/GaAs Heterointerfaces
Fabricated by Surface-Activated Bonding Analyzed by Atom Probe Tomography",
in MRS Fall Meeting, Boston, USA, Nov. 25-30, 2018, ET02.10.12.
- Shunichi Kono, Jianbo Liang, and Naoteru Shigekawa, "p+-Si/AlGaN/GaN HEMTs with Si/nitride bonding interfaces for high thermal
tolerance", in International Workshop on Nitride Semiconductors (IWN
2018), Kanazawa, Japan, Nov. 11-16, 2018,ThP-ED-10.
- Shoji Yamajo, Jianbo Liang, and Naoteru Shigekawa, "TEM characterization
of GaAs/GaN heterointerface fabricated by surface activated bonding",
in International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa,
Japan, Nov. 11-16, 2018, TuP-CR-18.
- J. Liang, Y. Zhou, S. Yamajo, M. Arai, M. Kuball, and N. Shigekawa, "Investigation
of Residual Strain in 4H-SiC/Si Heterostructures Fabricated by Surface
Activated Bonding", in Americas International Meeting on Electrochemistry
and Solid State Science (AIMES2018), Cancun, Mexico, Sept. 30-Oct. 4, 2018,
G01-0975.
- Y. Ohno, H. Yoshida, S. Takeda, J. Liang, and N. Shigekawa, "Atomistic
Structure of Low-Resistance Si/GaAs Heterointerfaces Fabricated by Surface-Activated
Bonding at Room Temperature", in Americas International Meeting on
Electrochemistry and Solid State Science (AIMES2018), Cancun, Mexico, Sept.
30-Oct. 4, 2018, G01-0968.
- S. Morita, J. Liang, and N. Shigekawa, "Electrical Characteristics
of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using
Surface Activated Bonding", in Americas International Meeting on Electrochemistry
and Solid State Science (AIMES2018), Cancun, Mexico, Sept. 30-Oct. 4, 2018,
G01-0961.
- K. Shimozato, J. Liang, M. Arai and N. Shigekawa, "Dependence of characteristics
of directly-bonded SiC/Si junctions on bonding temperature", Abstracts
of 2018 International Meeting for Future of Electron Devices, Kansai (IMFEDK
2018), Ryukoku Univ., Kyoto, Japan, June 21-22, 2018, pp. 40-41.
- Y. Matsumoto, S. Hisamoto, J. Liang and N. Shigekawa, "Penetration
depth of effects of irradiation of Ar fast atom beams in n-Si surfaces",
Abstracts of 2018 International Meeting for Future of Electron Devices,
Kansai (IMFEDK 2018), Ryukoku Univ., Kyoto, Japan, June 21-22, 2018, pp.
26-27.
- T. Hishida, J. Liang and N. Shigekawa, "Fabrication of Si//patterned metal layer/Si junctions for hybrid multijunction
solar cells with improved bonding interface properties", Abstracts of 2018 International Meeting for Future of Electron
Devices, Kansai (IMFEDK 2018), Ryukoku Univ., Kyoto, Japan, June 21-22,
2018, pp. 24-25.(DOI:10.1109/IMFEDK.2018.8581912)
- Jianbo Liang, Shoji Yamajo, Martin Kuball and Naoteru Shigekawa, "Room-Temperature
Direct Bonding of Diamond to Aluminum", New Diamond and Nano Carbons
Conference (NDNC 2018), Flagstaff, Arizona, USA, May 20-24, 2018, A1.03.
- Naoteru Shigekawa, "Hybrid heterostructures and heterostructure devices fabricated by surface activated bonding technologies", Book of Abstracts, The 42nd Workshop on Compound Semiconductor
Devices and Integrated Circuits (WOCSDICE 2018), National Institute for
Research and Development in Microtechnologies –IMT Bucharest, Bucharest,
Romania, May 14‐16, 2018, pp. 48-49 (Invited).
- Dong Liu, Jianbo Liang, Stephen Fabes, Naoteru Shigekawa and Martin Kuball,
"Interfacial strength and fracture toughness in integrated semiconductor
materials", Digest of Papers, 2018 International Conference on Compound Semiconductor
Manufacturing Technologies (CS MANTECH 2018), Austin Texas, USA, May 7-10,
2018 2.2.
- Naoteru Shigekawa, "Application of surface-activated bonding technologies
for III-V-on-Si hybrid multijunction cells", in EMN Singapore Meeting,
Jan. 15-19, 2018, A03 (Invited).
- Tomoya Hara, Tomoki Ogawa, Jianbo Liang, Kenji Araki, Takefumi Kamioka
and Naoteru Shigekawa, "Annealing Effects on GaAs/ITO/Si Junctions Fabricated by Surface-Activated
Bonding", in 27th International Phovoltaic Science and Engineering Conference
(PVSEC-27), Lake Biwa Ohtsu Prince Hotel, Japan, Nov. 12-17, 2017, 3ThPo.117.
- Sanji Yoon, Jianbo Liang and Naoteru Shigekawa, "GaAs Single Junction Cells on Si Substrates Fabricated by Surface Activated Bonding and Etching of Sacrificial Layers", in 27th International Phovoltaic Science and Engineering Conference
(PVSEC-27), Lake Biwa Ohtsu Prince Hotel, Japan, Nov. 12-17, 2017, 3TuPo.133.
- Keita Matsuura, Jianbo Liang, Koichi Maezawa and Naoteru Shigekawa, "Al-foil-based
low-loss coplanar waveguides directly bonded to sapphire substrates",
Extended Abstracts of the 2017 International Conference on Solid State
Devices and Materials, Sendai, Japan, Sep. 19-22, 2017, pp 495-496.
- Katsuya Furuna, Jianbo Liang, Moeko Matsubara, Dhamrin Marwan, Yoshitaka
Nishio and Naoteru Shigekawa, "Impacts of annealing on interfaces
of Al foil/Si junctions by using surface activated bonding", Extended
Abstracts of the 2017 International Conference on Solid State Devices and
Materials, Sendai, Japan, Sep. 19-22, 2017, pp 387-388.
- Jianbo Liang, Satoshi Masuya, Makoto Kasu, Manikant Singh, Michael J. Uren, Martin Kuball and Naoteru Shigekawa, "Room temperature direct bonding of single crystal diamond and Si substrates for the combination of diamond devices with Si LSI", in 12th Topical Workshop on Heterostructure Microelectroncs (TWHM 2017), Hotel Kyocera, Kirishima, Japan, Aug. 28-31, 2017, pp. 71-72.
- Jianbo Liang, Takuya Nishimura, Moeko Matsubara, Marwan Dhamrin, Yoshitaka
Nishio, and Naoteru Shigekawa, "Formation of contacts with high thermal
tolerance by using Si/GaN junctions", in 12th International Conference
on Nitride Semiconductors (ICNS12), Strasbourg, France, 24th-28th July
2017, C01.44.
- S. Yamajo, J. Liang, and N. Shigekawa, "Analysis of the influence of interface charges on the electrical characteristics
of GaAs/GaN junctions", in Abstracts of 2017 5th International Workshop on Low Temperature
Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017,
p. 77.
- S. Morita, J. Liang, M. Matsubara, M. Dhamrin, Y. Nishio, and N. Shigekawa,
"Electrical Properties of Al-Foil/4H-SiC Schottky Junctions Fabricated by
Surface-Activated Bonding", in Abstracts of 2017 5th International Workshop on Low Temperature
Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017,
p. 68.
- Naoteru Shigekawa and Jianbo Liang, "Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells", in Abstracts of 2017 5th International Workshop on Low Temperature
Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017,
p. 52.
- Jianbo Liang, Tomoki Ogawa, Kenji Araki, Takefumi Kamioka, Naoteru Shigekawa,
"Electrical conduction of Si/ITO/Si junctions fabricated by surface activated
bonding", in Abstracts of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017, p. 51.
- Naoteru Shigekawa, Sae Shimizu, Jianbo Liang, Masato Shingo, Kenji Shiojima,
and Manabu Arai, "Transport Characteristics of Optically-Excited and Electrically-Injected
Minority Electrons across p-Si/n-SiC Hetero-Interfaces", in Abstracts of 2017 5th International Workshop on Low Temperature
Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017,
p. 26.
- Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Liang Jianbo, and Naoteru Shigekawa, "Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature", in Abstracts of 2017 5th International Workshop on Low Temperature
Bonding for 3D Integration (LTB-3D 2017), Tokyo, Japan, May 16-18, 2017,
p. 4.
- Naoteru Shigekawa and Jianbo Liang, "Surface-activated Bonding of III-V Compound Semiconductors and Si for Fabricating
Hybrid Tandem Solar Cells", Proc. 2017 International Conference on Electronics Packaging (ICEP
2017), Takinoyu Hotel, Tendo, Yamagata, Japan, Apr. 19-22, 2017, pp. 229-231
(Session Invited).
- T. Ogawa, J. Liang, S. Imasaki, T. Watanabe, D.G. Kim, and N. Shigekawa,
"Effects of layered CdTe nano particles on Si solar cells", Extended Abstracts of IEEE 2016 International Meeting for Future
of Electron Devices, Kansai, pp. 114-115, DOI: 10.1109/IMFEDK.2016.7521707
[IEEE Conference Publication]
- K.Furuna, J.Liang, N. Shigekawa, M.Matsubara, M.Dhamrin, and Y.Nishio,
"Electrical characteristics of Al foil/Si junctions by surface activated
bonding method", Extended Abstracts of 2016 IEEE International Meeting for Future
of Electron Devices, Kansai, pp. 86-87, DOI: 10.1109/IMFEDK.2016.7521694
[IEEE Conference Publication]
- S.Morita, T.Nishimura, J.Liang, and N.Shigekawa, "Electrical characteristics of SAB-Based n+-n Ge/4H-SiC heterojunctions", Extended Abstracts of 2016 IEEE International Meeting for Future
of Electron Devices, Kansai, pp. 74-75, DOI: 10.1109/IMFEDK.2016.7521688
[IEEE Conference Publication]
- S.Hisamoto, J.Liang, and N.Shigekawa, "Effects of Ar beam irradiation on Si-based Schottky contacts", Extended Abstracts of 2016 IEEE International Meeting for Future
of Electron Devices, Kansai, pp. 40-41, DOI: 10.1109/IMFEDK.2016.7521671
[IEEE Conference Publication]
- Naoteru Shigekawa and Jianbo Liang, "III-V-on-Si hybrid tandem cells
by room-temperature surface-activated bonding", in EMN Meeting on
Photovoltaics 2016 (Hong Kong, Jan. 18-21, 2016) p. 30 [Invited].
- S. Yamajo, J. Liang, N. Watanabe, and N. Shigekawa, "Band lineups
in GaAs/GaN junctions using surface-activated bonding", in 11th Topical
Workshop on Heterostructure Microelectronics (TWHM2015) (Takayama, Japan,
Aug. 23-26, 2015) p. 41.
- T. Nishimura, J. Liang, N. Watanabe, and N. Shigekawa, "Impacts of annealing in N2/H2 ambient on electrical properties of Si/GaN junctions", in 11th Topical
Workshop on Heterostructure Microelectronics (TWHM2015) (Takayama, Japan,
Aug. 23-26, 2015) p. 39.
- S. Shimizu, J. Liang, M. Arai, and N. Shigekawa, "Fabrication and
characterization of GaAs/4H-SiC junctions by using SAB", in 11th Topical
Workshop on Heterostructure Microelectronics (TWHM2015) (Takayama, Japan,
Aug. 23-26, 2015) p. 37.
- S. Shimizu, S. Nishida, J. Liang, M. Morimoto and N. Shigekawa, "Fabrication
and characterization of Si-based bipolar transistor structures using low-temperature
bonding", Extended Abstracts of 2015 IEEE International Meeting for Future of Electron Devices, Kansai, (IMFEDK 2015)
pp. 64-65. [IEEE Conference Publication]
- S. Yamajo, M. Morimoto, J. Liang and N. Shigekawa, "Interface characteristics
of Si/Si junctions by using surface-activated bonding", Extended Abstracts
of 2015 IEEE International Meeting for Future of Electron Devices, Kansai, (IMFEDK 2015)
pp. 62-63. [IEEE Conference Publication]
- T. Nishimura, J. Liang, N. Shigekawa and N. Watanabe, "Electrical
properties of n+-Si/n-GaN junctions by room temperature bonding", Extended Abstracts
of 2015 IEEE International Meeting for Future of Electron Devices, Kansai, (IMFEDK 2015)
pp. 46-47. [IEEE Conference Publication]
- L. Chai, J. Liang, S. Nishida, M. Morimoto and N. Shigekawa, "Electrical
characterization of GaAs/GaAs bonding interfaces", Extended Abstracts
of 2015 IEEE International Meeting for Future of Electron Devices, Kansai,
(IMFEDK 2015) pp. 44-45. [IEEE Conference Publication]
- N. Shigekawa, M. Morimoto, S. Nishida, and J. Liang, "Surface-Activated-Bonding
Based InGaP-on-Si Double Junction Cells", in 2013 International Conference
on Solid State Devices and Materials (Fukuoka, Japan, Sept. 24-27, 2013)
N-8-5L.
- J. Liang, M. Morimoto, S. Nishida, M. Arai, and N. Shigekawa, "Electrical properties of p+-Si/n-SiC heterojunctions by using surface-activated bonding", in 10th Topical Workshop on Heterostructure Microelectronics (TWHM2013) (Hakodate, Japan, Sept. 2-5, 2013) p. 133.
- N. Shigekawa, N. Watanabe, and E. Higurashi, "Electrical Properties of Si-based Junctions by SAB", in Proc. 3rd International IEEE Workshop on Low Temperature Bonding
for 3D Integration (Tokyo, Japan, 2012), pp. 109-112.
Publication before 2007
- Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, and Kohji Hohkawa, "SAW Filters Composed of Interdigital Schottky and Ohmic Contacts
on AlGaN/GaN Heterostructures", IEEE Electron Device Letters, 28 (2),
pp. 90-92 (2007).
- Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama,
and Kohji Hohkawa, "Interdigital transducers with control gates on AlGaN/GaN heterostructures", Applied Physics Letters, 89 (3), pp. 033501-1- 033501-3 (2006).
- K. Nishimura, N. Shigekawa, H. Yokoyama, and K. Hohkawa, "SAW characteristics of GaN with n+-GaN IDTs", IEE Electronics
Letters, 42 (1), pp. 62-63 (2006).
- K. Shiojima, T. Makimura, T. Maruyama, T. Kosugi, T. Suemitsu, N. Shigekawa,
M. Hiroki, and H. Yokoyama, "Dual-gate AlGaN/GaN high-electron-mobility transistors with short
gate length for high-power mixers",Physica Status Solidi (c), 3 (3),
pp. 469-472 (2006).
- K. Shiojima, T. Makimura, T. Maruyama, T. Suemitsu, N. Shigekawa, M. Hiroki,
and H. Yokoyama, "Effect of epitaxial layer crystal quality on DC and RF characteristics
of AlGaN/GaN short-gate HEMTs", Physica Status Solidi (c), 3 (6),
pp. 2360-2363 (2006).
- Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, and Kohji Hohkawa,
"Side-gate effects on transfer characteristics in GaN-based transversal
filters",Applied Physics Letters, 87 (8), pp. 084102-1-084102-3 (2005).
- Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, and Kohji Hohkawa,
"Velocity dispersion in GaN-based surface acoustic wave filters on
(0001) sapphire substrates", IEICE Electronics Express, 2 (19), pp.
495-500 (2005).
- Pouya Valizadeh , Dimitris Pavlidis, Kenji Shiojima, Takashi Makimura,
and Naoteru Shigekawa, "Low frequency noise of AlGaN/GaN MODFETs: A comparative study of
surface, barrier and heterointerface effects",Solid-State Electronics,
49 (8), pp. 1352-1360 (2005).
- Tetsuya Suemitsu, Kenji Shiojima, Takashi Makimura, and Naoteru Shigekawa,
"Intrinsic transit delay and effective electron velocity of AlGaN/GaN
high electron mobility transistors", Japanese Journal of Applied Physics,
44 (6), pp. L211-L213 (2005).
- Kazumi Nishimura, Naoteru Shigekawa, Haruki Yokoyama, and Kohji Hohkawa,
"Temperature dependence of surface acoustic wave characteristics of
GaN layers on sapphire substrates", Japanese Journal of Applied Physics,
44 (18), pp. L564-L565 (2005).
- K. Saito, T. Ono, M. Shimada, N. Shigekawa, and T. Enoki, "Al/AlN/InP metal-insulator-semiconductor-diode characteristics with
amorphous AlN films deposited by electron-cyclotron-resonance sputtering",
Japanese Journal of Applied Physics, 44 (1A), pp. 334-342 (2005).
- Kazumi Nishimura, Naoteru Shigekawa, Haruki Yokoyama, Masanobu Hiroki,
and Kohji Hohkawa, "SAW characteristics of GaN layers with surfaces exposed by dry etching",IEICE
Electronics Express, 2 (19), pp. 501-505 (2005).
- Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu and Naoteru Shigekawa,
"Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics
of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire
Substrates", Japanese Journal of Applied Physics, 44 (12), pp. 8435-8440
(2005).
- K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, H. Ishikawa,
and T. Egawa, "High-power AlGaN/GaN dual-gate high electron mobility transistor
mixers on SiC substrates", IEE Electronics Letters, 40 (12), pp. 775-776
(2004).
- Kenji Shiojima and Naoteru Shigekawa, "Thermal stability of electrical properties in AlGaN/GaN heterostructures",
Japanese Journal of Applied Physics, 43 (1), pp. 100-105 (2004).
- Kenji Shiojima, Suehiro Sugitani, and Naoteru Shigekawa, "Systematic study of thermal stability of AlGaN/GaN two-dimensional
electron gas structure with SiN surface passivation",IEICE Electronics
Express, 1 (7), 160 (2004).
- Naoteru Shigekawa, Kiyomitsu Onodera, and Kenji Shiojima, "Device temperature measurement of highly biased AlGaN/GaN high-electron-mobility
transistors", Japenese Journal of Applied Physics, 42 (4B), pp. 2245-2249
(2003).
- Naoteru Shigekawa, Kenji Shiojima, and Tetsuya Suemitsu, "Optical study of high-biased AlGaN/GaN high-electron-mobility transistors",
Journal of Applied Physics, 92 (1), pp. 531-535 (2002).
- Naoteru Shigekawa, Kenji Shiojima, and Tetsuya Suemitsu, "Electroluminescence characterization of AlGaN/GaN high-electron-mobility
transistors", Applied Physics Letters, 79 (8), pp. 1196-1198 (2001).
- H. Kamitsuna, Y. Matsuoka, S. Yamahata, and N. Shigekawa, "Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs",IEEE Transaction
on Microwave Theory and Techniques, 49 (10), pp. 1921-1925 (2001).
- H. Kamitsuna, Y. Matsuoka, S. Yamahata, and N. Shigekawa, "Use of an InP/InGaAs double heterostructure phototransistor in a
40 GHz OEMMIC photoreceiver", Microwave Engineering Europe, 70, November
issue, pp. 67-73 (2000).
- Kenji Shiojima, Naoteru Shigekawa, and Tetsuya Suemitsu, "Improved carrier confinement by a buried p-layer in the AlGaN/GaN
HEMT structure",IEICE Transaction on Electronics, E83-C (12), pp.1968-1970
(2000).
- Naoteru Shigekawa, Tomofumi Furuta, Tetsuya Suemitsu and Yohtaro Umeda,
"Optical Characterization of Impact Ionization in Flip-Chip-Bonded
InP-Based High Electron Mobility Transistors", Japanese Journal of
Applied Physics, 38 (10), pp. 5823-5828 (1999).
- Naoteru Shigekawa, Takatomo Enoki, Tomofumi Furuta, and Hiroshi Ito, "High-Energy and Recombination-Induced Electroluminescence of InAlAs/InGaAs
HEMTs Lattice-Matched to InP Substrates",IEEE Transaction on Electron
Devices, 44 (4), pp. 513-519 (1997).
- Naoteru Shigekawa, Takatomo Enoki and Tomofumi Furuta, "Electroluminescence from an InGaAs-Based High Electron Mobility Transistor
Designed for High-Speed Operation", Japanese Journal of Applied Physics,
36 (7B), pp. L906-L908 (1997).
- H. Ito, S. Yamahata, N. Shigekawa, K. Kurishima, "High fmax
carbon-doped base InP/lnGaAs heterojunction bipolar transistors grown by
MOCVD", Electronics Letters, 32 (15), pp. 1415-1416 (1996).
- Hiroshi Ito, Shoji Yamahata, Naoteru Shigekawa, Kenji Kurishima and Yutaka
Matsuoka, "Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs
Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition",Japanese
Journal of Applied Physics, 35 (6A), pp. 3343-3349 (1996).
- M. Ida, N. Shigekawa, T. Furuta, H. Ito, and T. Kobayashi, "Compositional change near the mask edge in selective InGaAs growth
by low-temperature MOCVD", Journal of Crystal Growth, 158 (4), pp.
437-442, (1996).
- Hiroshi Ito, Shoji Yamahata, Naoteru Shigekawa and Kenji Kurishima, "Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors
Grown by Two-Step Metalorganic Chemical Vapor Deposition", Japanese
Journal of Applied Physics, 35 (12A), pp. 6139-6144 (1996).
- N. Shigekawa, T. Enoki, T. Furuta, and H. Ito, "Electroluminescence
of InAlAs/InGaAs HEMTs lattice-matched to InP substrates", IEEE Electron
Device Letters, 16 (11), pp. 515-517 (1995).
- H. Ito, S. Yamahata, N. Shigekawa, K. Kurishima, and Y. Matsuoka, "High-speed carbon-doped-base InP/InGaAs heterojunction bipolar transistors
grown by MOCVD",Electronics Letters, 31 (24), pp. 2128-2130 (1995).
- N. Shigekawa, P. H. Beton, H. Buhmann, L. Eaves, M. Henini, and D. Johnston,
"An (AlGa)As/GaAs heterojunction bipolar transistor with a resonant-tunnelling
collector",Semiconductor Science and Technology, 9, pp. 1500-1503
(1994).
- Naoteru Shigekawa, Tomofumi Furuta, Kunihiro Arai, and Masaaki Tomizawa,
"Photoluminescence study of undoped-like GaAs/AlGaAs quantum wells
in high electric fields", Journal of Applied Physics, 74 (2), pp.
1188-1194 (1993).
- Naoteru Shigekawa, Tomofumi Furuta, Kunihiro Arai, and Masaaki Tomizawa,
"High-field electron velocity measurement in GaAs/AlGaAs multiple-quantum
wells", Applied Physics Letters, 61 (13), pp. 1555-1557 (1992).
- Naoteru Shigekawa, Tomofumi Furuta, and Kunihiro Arai, "High-field electron-transport properties in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure", Journal of Applied Physics, 69 (7), pp.
4003-4010 (1991).
- Naoteru Shigekawa and Eiichi Yamaguchi, "A Monte Carlo Supercell Approach for the Effects of Disorder on the
Upper-Valley Electronic Properties in InGaAs Ternary Alloys", Japanese
Journal of Applied Physics, 30 (8A), pp. L1340-L1342 (1991).
- Naoteru Shigekawa, Tomofumi Furuta, Koichi Maezawa, and Takashi Mizutani,
"Optically excited minority-electron velocity in selectively Be-doped
AlGaAs/GaAs/AlGaAs single quantum wells", Applied Physics Letters,
56 (12), pp. 1146-1148 (1990).
- Naoteru Shigekawa, Tomofumi Furuta, and Kunihiro Arai, "Time-of-flight
measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure", Applied Physics Letters, 57 (1), pp. 67-69
(1990).
- Naoteru Shigekawa, Takashi Mizutani, and Kiyoyuki Yokoyama, "Effects
of phonon confinement on electron transport in superlattices", Journal
of Applied Physics, 65 (2), pp. 677-683 (1989).
- Naoteru Shigekawa, "Three-dimensional properties of conduction electrons in semiconductor
superlattices", Solid-State Electronics, 32 (9), pp. 761-766 (1989).
- T. Furuta, N. Shigekawa, T. Mizutani, and A. Yoshii, "Time-of-flight
measurement for electron velocity in p-AlGaAs/GaAs/AlGaAs at a high field",
Applied Physics Letters, 55 (22), pp. 2310-2312 (1989).
- Yuji Ito, Naoteru Shigekawa, Mitsuo Harada, Kazuhiko Inoue, and Peter B?ni,
"Studies of Constrained Dynamics of the Phase Transition in the Artificial
Bilayer Membrane of Dialkyl Ammonium Amphiphile by Quasielastic Neutron
Scattering", Journal of the Physical Society of Japan, 56 (6), pp.
2060-2069 (1987).